MT29F1G08ABB Datasheet | Micron Technology

.. Micron Confidential and Proprietary Advance‡ 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1Gxx ABB For the latest data sheet, refer to Micron's Web site: .micron./datasheets Features - Organization - Page size x8: 2,112 bytes (2,048 + 64 bytes) - Page size x16: 1,056 words (1,024 + 32 words) - Block size: 64 pages (128K + 4K bytes) - Device size: 1Gb: 1,024 blocks - READ performance - Random READ: 25µs (MAX) - Sequential READ: 50ns (MIN) - WRITE performance - PROGRAM PAGE: 300µs (TYP) - BLOCK ERASE: 2.0ms (TYP) - Endurance: 100,000 PROGRAM/ERASE cycles - Data retention: 10 years - The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles). - VCC: 1.65V- 1.95V - Automated PROGRAM and ERASE - Basic NAND Flash mand set - PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET - New mands - PAGE READ CACHE MODE - READ ID2 (contact factory) - READ UNIQUE ID (contact...