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MT29F1G08ABB - (MT29F1GxxABB) 1Gb NAND Flash Memory

Download the MT29F1G08ABB datasheet PDF. This datasheet also covers the MT29F1G16ABB variant, as both devices belong to the same (mt29f1gxxabb) 1gb nand flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • 1Gb NAND Flash Memory MT29F1GxxABB For the latest data sheet, refer to Micron's Web site: www. micron. com/datasheets Features.
  • Organization.
  • Page size x8: 2,112 bytes (2,048 + 64 bytes).
  • Page size x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 1Gb: 1,024 blocks.
  • READ performance.
  • Random READ: 25µs (MAX).
  • Sequential READ: 50ns (MIN).
  • WRITE performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT29F1G16ABB_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Micron Confidential and Proprietary Advance‡ 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB For the latest data sheet, refer to Micron's Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 1Gb: 1,024 blocks • READ performance • Random READ: 25µs (MAX) • Sequential READ: 50ns (MIN) • WRITE performance • PROGRAM PAGE: 300µs (TYP) • BLOCK ERASE: 2.0ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • Data retention: 10 years • The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles). • VCC: 1.65V–1.