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MT29F8G08FACWP - NAND Flash Memory

This page provides the datasheet information for the MT29F8G08FACWP, a member of the MT29F2G08AACWP NAND Flash Memory family.

Datasheet Summary

Description

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Features

  • NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www. micron. com/datasheets Features.
  • Organization.
  • Page size x8: 2,112 bytes (2,048 + 64 bytes).
  • Page size x16: 1,056 words (1,024 + 32 words).
  • Block size: 64 pages (128K + 4K bytes).
  • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks.
  • READ performance.
  • RANDOM READ: 25µs.

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Datasheet preview – MT29F8G08FACWP

Datasheet Details

Part number MT29F8G08FACWP
Manufacturer Micron Technology
File Size 1.15 MB
Description NAND Flash Memory
Datasheet download datasheet MT29F8G08FACWP Datasheet
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2Gb, 4GB, 8Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets Features • Organization • Page size x8: 2,112 bytes (2,048 + 64 bytes) • Page size x16: 1,056 words (1,024 + 32 words) • Block size: 64 pages (128K + 4K bytes) • Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks • READ performance • RANDOM READ: 25µs • SEQUENTIAL READ: 30ns (3V x8 only) • WRITE performance • PROGRAM PAGE: 300µs (TYP) • BLOCK ERASE: 2ms (TYP) • Endurance: 100,000 PROGRAM/ERASE cycles • First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) • VCC: 1.70V–1.95V1 or 2.7V–3.
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