MT29F8G08ABABA
Features
NAND Flash Memory
MT29F8G08ABABA, MT29F8G08ABCBB
Features
- Open NAND Flash Interface (ONFI) 2.1-pliant1
- Single-level cell (SLC) technology
- Organization
- Page size x8: 4320 bytes (4096 + 224 bytes)
- Block size: 128 pages (512K +28 K bytes)
- Plane size: 2 planes x 1024 blocks per plane
- Device size: 8Gb: 2048 blocks
- Synchronous I/O performance
- Up to synchronous timing mode 4
- Clock rate: 12ns (DDR)
- Read/write throughput per pin: 166 MT/s
- Asynchronous I/O performance
- Up to asynchronous timing mode 4
- t RC/t WC: 25ns (MIN)
- Array performance
- Read page: 25µs (MAX)
- Program page: 230µs (TYP)
- Erase block: 700µs (TYP)
- Operating Voltage Range
- VCC: 2.7- 3.6V
- VCCQ: 1.7- 1.95V, 2.7- 3.6V
- mand set: ONFI NAND Flash Protocol
- Advanced mand Set
- Program cache
- Read cache sequential
- Read cache random
- One-time programmable (OTP) mode
- Multi-plane mands
- Multi-LUN operations
- Read unique ID
- Copyback
- First block (block address 00h) is valid when...
