MT47H32M16 Datasheet | Micron Technology

512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 - 32 Meg x 4 x 4 banks MT47H64M8 - 16 Meg x 8 x 4 banks MT47H32M16 - 8 Meg x 16 x 4 banks Features - VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V - JEDEC-standard 1.8V I/O (SSTL_18-patible) - Differential data strobe (DQS, DQS#) option - 4n-bit prefetch architecture - Duplicate output strobe (RDQS) option for x8 - DLL to align DQ and DQS transitions with CK - 4 internal banks for concurrent operation - Programmable CAS latency (CL) - Posted CAS additive latency (AL) - WRITE latency = READ latency - 1 tCK - Selectable burst lengths: 4 or 8 - Adjustable data-output drive strength - 64ms, 8192-cycle refresh - On-die termination (ODT) -...