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MT47H1G4 - TwinDie DDR2 SDRAM

General Description

package dimensions, and the ballout only.

Refer to Micron's 2Gb DDR2 data sheet for complete information or for specifications not included in this document.

Configuration 64 Meg x 4 x 8 banks x 2 ranks 32 Meg x 8 x 8 banks x 2 ranks FBGA package (Pb

Key Features

  • TwinDie™ DDR2 SDRAM MT47H1G4.
  • 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8.
  • 32 Meg x 8 x 8 Banks x 2 Ranks Features.
  • Uses 2Gb Micron die.
  • Two ranks (includes dual CS#, ODT, and CKE balls).
  • Each rank has 8 internal banks for concurrent operation.
  • VDD = V DDQ = +1.8V ±0.1V.
  • JEDEC-standard 63-ball FBGA.
  • Low-profile package.
  • 1.35mm MAX thickness Functionality The 4Gb (TwinDie™) DDR2 SDRAM uses Micron’s 2Gb DDR2 monolithic.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie™ DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features • Uses 2Gb Micron die • Two ranks (includes dual CS#, ODT, and CKE balls) • Each rank has 8 internal banks for concurrent operation • VDD = V DDQ = +1.8V ±0.1V • JEDEC-standard 63-ball FBGA • Low-profile package – 1.35mm MAX thickness Functionality The 4Gb (TwinDie™) DDR2 SDRAM uses Micron’s 2Gb DDR2 monolithic die and has similar functionality. This TwinDie data sheet is intended to provide a general description, package dimensions, and the ballout only. Refer to Micron's 2Gb DDR2 data sheet for complete information or for specifications not included in this document.