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MT47H256M4 - DDR2 SDRAM

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Micron Technology

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MT47H256M4 DDR2 SDRAM by Micron Technology - Datasheet Preview — Datasheet preview – MT47H256M4

Datasheet Details

Part number	MT47H256M4
Manufacturer	Micron Technology
File Size	9.35 MB
Description	DDR2 SDRAM
Datasheet	MT47H256M4 Datasheet
Additional preview pages of the MT47H256M4 datasheet.

Product details

Features

Features.
VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V.
JEDEC-standard 1.8V I/O (SSTL_18-compatible).
Differential data strobe (DQS, DQS#) option.
4n-bit prefetch architecture.
Duplicate output strobe (RDQS) option for x8.
DLL to align DQ and DQS transitions with CK.
8 internal banks for concurrent operation.
Programmable CAS latency (CL).
Posted CAS additive latency (AL).
WRITE latency = READ latency - 1 tCK.

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Published: Sep 7, 2007 |