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MT48H16M16LF - (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM

Download the MT48H16M16LF datasheet PDF. This datasheet also covers the MT48H16M32LF variant, as both devices belong to the same (mt48h16m16lf / mt48h16m32lf) 16 meg x 32 mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • Mobile SDRAM MT48H32M16LF.
  • 8 Meg x 16 x 4 banks MT48H16M32LF/LG.
  • 4 Meg x 32 x 4 banks Features.
  • Endur-IC™ technology.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • VDD = 1.7.
  • 1.95V; VDDQ = 1.7.
  • 1.95V.
  • Internal, pipelined operation; column address can be changed every clock cycle.
  • Four internal banks for concurrent operation.
  • Programmable burst lengths: 1, 2, 4, 8, and continuous1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT48H16M32LF_MicronTechnology.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Micron Technology

Part Number Description
MT48H16M16LFBG 256M x 16 Mobile SDRAM
MT48H16M16LFFG 256M x 16 Mobile SDRAM
MT48H16M32LF Mobile LPSDR SDRAM
MT48H16M32LG (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM
MT48H16M32LG Mobile LPSDR SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features • Endur-IC™ technology • Fully synchronous; all signals registered on positive edge of system clock • VDD = 1.7–1.95V; VDDQ = 1.7–1.