MT48H16M32LG Datasheet | Micron Technology

.. 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF - 8 Meg x 16 x 4 banks MT48H16M32LF/LG - 4 Meg x 32 x 4 banks Features - Endur-IC™ technology - Fully synchronous; all signals registered on positive edge of system clock - VDD = 1.7- 1.95V; VDDQ = 1.7- 1.95V - Internal, pipelined operation; column address can be changed every clock cycle - Four internal banks for concurrent operation - Programmable burst lengths: 1, 2, 4, 8, and continuous1 - Auto precharge, includes concurrent auto precharge - Auto refresh and self refresh modes - LVTTL-patible inputs and outputs - On-chip temperature sensor to control refresh rate - Partial-array self...