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MT48H16M32LG - (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM

This page provides the datasheet information for the MT48H16M32LG, a member of the MT48H16M32LF (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM family.

Datasheet Summary

Description

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Features

  • Mobile SDRAM MT48H32M16LF.
  • 8 Meg x 16 x 4 banks MT48H16M32LF/LG.
  • 4 Meg x 32 x 4 banks Features.
  • Endur-IC™ technology.
  • Fully synchronous; all signals registered on positive edge of system clock.
  • VDD = 1.7.
  • 1.95V; VDDQ = 1.7.
  • 1.95V.
  • Internal, pipelined operation; column address can be changed every clock cycle.
  • Four internal banks for concurrent operation.
  • Programmable burst lengths: 1, 2, 4, 8, and continuous1.

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Datasheet preview – MT48H16M32LG

Datasheet Details

Part number MT48H16M32LG
Manufacturer Micron Technology
File Size 766.28 KB
Description (MT48H16M16LF / MT48H16M32LF) 16 Meg x 32 Mobile SDRAM
Datasheet download datasheet MT48H16M32LG Datasheet
Additional preview pages of the MT48H16M32LG datasheet.

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www.DataSheet4U.com 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF – 8 Meg x 16 x 4 banks MT48H16M32LF/LG – 4 Meg x 32 x 4 banks Features • Endur-IC™ technology • Fully synchronous; all signals registered on positive edge of system clock • VDD = 1.7–1.95V; VDDQ = 1.7–1.
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