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128Mb: x16 – Mobile SDRAM Features
Synchronous DRAM
MT48H8M16LF - 2 Meg x 16 x 4 banks
Features
• Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto precharge, includes concurrent auto precharge, and auto refresh modes • Self refresh mode; standard and low power • 64ms, 4,096-cycle refresh • LVTTL-compatible inputs and outputs • Low voltage power supply • Partial array self refresh power-saving mode • Deep power-down mode • Programmable output drive strength • Operating temperature ranges: Extended (-25°C to +85°C) Industrial (-40°
MT48H8M16LF Datasheet
