MT5C128K8A1 Description
The MT5C128K8A1 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high-speed, lowpower CMOS process. Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. This device offers multiple center power and ground pins for improved performance.
MT5C128K8A1 Key Features
- High speed: 12, 15, 20 and 25ns
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with ?C/E and ?O/E options
- Automatic ?C/E power down
- All inputs and outputs are TTL-patible
- High-performance, low-power, CMOS double-metal process
- Single +5V ± 10% power supply
- Fast ?O/E access times: 6, 8, 10 and 12ns
- Timing 12ns access 15ns access 20ns access 25ns access
- 2V data retention (optional)