Datasheet Details
| Part number | MT5C128K8A1 |
|---|---|
| Manufacturer | Micron Technology |
| File Size | 263.25 KB |
| Description | 128K x 8 SRAM |
| Datasheet |
 MT5C128K8A1 Datasheet
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General Description
The MT5C128K8A1 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high-speed, lowpower CMOS process.
Micron SRAMs are fabricated using double-layer metal, double-layer polysilicon technology.
Key Features
- High speed: 12, 15, 20 and 25ns.
- Multiple center power and ground pins for greater noise immunity.
- Easy memory expansion with ?C/E and ?O/E options.
- Automatic ?C/E power down.
- All inputs and outputs are TTL-compatible.
- High-performance, low-power, CMOS double-metal process.
- Single +5V ± 10% power supply.
- Fast ?O/E access times: 6, 8, 10 and 12ns 128K x 8 SRAM WITH SINGLE CHIP ENABLE,.