EDW2032BBBG Description
2Gb: x16, x32 GDDR5.
EDW2032BBBG Key Features
- 4 Meg x 32 I/O x 16 banks, 8 Meg x 16 I/O x 16 banks
- VDD = VDDQ = 1.6V/1.5V ±3% and 1.35V ±3%
- Data rate: 5.0 Gb/s, 6.0 Gb/s, 7.0 Gb/s (MAX)
- 16 internal banks
- Four bank groups for tCCDL = 3 tCK
- 8n-bit prefetch architecture: 256-bit per array read
- Burst length (BL): 8 only
- Programmable CAS latency: 6-22
- Programmable WRITE latency: 3-7
- Programmable CRC READ latency: 1-3