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JR28F064M29EWTA

Manufacturer: Micron Technology

JR28F064M29EWTA datasheet by Micron Technology.

This datasheet includes multiple variants, all published together in a single manufacturer document.

JR28F064M29EWTA datasheet preview

JR28F064M29EWTA Datasheet Details

Part number	JR28F064M29EWTA
Datasheet	JR28F064M29EWTA JR28F032M29EWXX Datasheet (PDF)
File Size	1.04 MB
Manufacturer	Micron Technology
Description	Parallel NOR Flash Embedded Memory

JR28F064M29EWTA Overview

3V Embedded Parallel NOR Flash.

JR28F064M29EWTA Key Features

Supply voltage
VCC = 2.7-3.6V (program, erase, read)
VCCQ = 1.65-3.6V (I/O buffers)
Asynchronous random or page read
Page size: 8 words or 16 bytes
Page access: 25ns
Random access: 60ns (BGA); 70ns (TSOP)
Buffer program: 256-word MAX program buffer
Program time
0.56µs per byte (1.8 MB/s TYP when using 256word buffer size in buffer program without V PPH)

More Datasheets from Micron Technology

View all Micron Technology datasheets

Part Number	Description
JR28F064M29EWTB	Parallel NOR Flash Embedded Memory
JR28F064M29EWBA	Parallel NOR Flash Embedded Memory
JR28F064M29EWHA	Parallel NOR Flash Embedded Memory
JR28F064M29EWHB	Parallel NOR Flash Embedded Memory
JR28F064M29EWLA	Parallel NOR Flash Embedded Memory
JR28F064M29EWLB	Parallel NOR Flash Embedded Memory
JR28F064M29EWXX	Parallel NOR Flash Embedded Memory
JR28F032M29EWBA	Parallel NOR Flash Embedded Memory
JR28F032M29EWBB	Parallel NOR Flash Embedded Memory
JR28F032M29EWHA	Parallel NOR Flash Embedded Memory

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