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M29W128GL - Parallel NOR Flash Embedded Memory

Download the M29W128GL datasheet PDF. This datasheet also covers the M29W128GH variant, as both devices belong to the same parallel nor flash embedded memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features.
  • Supply voltage.
  • VCC = 2.7.
  • 3.6V (program, erase, read).
  • VCCQ = 1.65.
  • 3.6V (I/O buffers).
  • VPPH = 12V for fast program (optional).
  • Asynchronous random/page read.
  • Page size: 8 words or 16 bytes.
  • Page access: 25, 30ns.
  • Random access: 60ns1, 70, 80ns.
  • Fast program commands: 32-word (64-byte) write buffer.
  • Enhanced buffered program c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M29W128GH-Micron.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
M29W128GL 128 Mbit 3V Supply Flash Memory Numonyx
M29W128GH 128 Mbit 3V Supply Flash Memory Numonyx
M29W128FH 128 Mbit 3V Supply Flash Memory Numonyx
M29W128FL 128 Mbit 3V Supply Flash Memory Numonyx
M29W102BB 1 Mbit 64Kb x16 / Boot Block Low Voltage Single Supply Flash Memory ST Microelectronics

Other Datasheets by Micron Technology

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
128Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W128GH, M29W128GL Features • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65–3.