Datasheet Summary
.. M29W128GH M29W128GL
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
Features
- Supply voltage
- VCC = 2.7 to 3.6 V for program, erase, read
- VCCQ = 1.65 to 3.6 V for I/O buffers
- VPPH = 12 V for fast program (optional)
- Asynchronous random/page read
- Page size: 8 words or 16 bytes
- Page access: 25, 30 ns
- Random access: 60 (only available upon customer request) or 70, 80 ns
- Fast program mands
- 32 words (64-byte write buffer)
- Enhanced buffered program mands
- 256 words
- Programming time
- 16 μs per byte/word typical
- Chip program time: 5 s with VPPH and 8 s without VPPH
- Memory organization
- M29128GH/L: 128 main...
