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M39L0R7090U3ZE6E - NOR Flash

This page provides the datasheet information for the M39L0R7090U3ZE6E, a member of the M39L0R7070U3ZE6E NOR Flash family.

Datasheet Summary

Features

  • NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package.
  • One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory.
  • One die of 128Mb or 512Mb LPDDR.
  • Supply voltages:.
  • VDDF = VDDQF = 1.7.
  • 1.95V.
  • VPPF = 9V for fast program.
  • VDDD = VDDQD = 1.7.
  • 1.95V.
  • Electronic signature:.
  • Manufacturer code: 20h.
  • Top device codes: M58LR128KC = 882Eh M58LR256KC.

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Datasheet preview – M39L0R7090U3ZE6E

Datasheet Details

Part number M39L0R7090U3ZE6E
Manufacturer Micron
File Size 308.35 KB
Description NOR Flash
Datasheet download datasheet M39L0R7090U3ZE6E Datasheet
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Full PDF Text Transcription

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128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package • One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory • One die of 128Mb or 512Mb LPDDR • Supply voltages: – VDDF = VDDQF = 1.7–1.95V – VPPF = 9V for fast program – VDDD = VDDQD = 1.7–1.95V • Electronic signature: – Manufacturer code: 20h – Top device codes: M58LR128KC = 882Eh M58LR256KC = 881Ch – Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh • 133-ball VFBGA package – RoHS-compliant Flash Memory • Multiplexed address/data • Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Random access: 70ns • Synchronous burst read suspend • Programming time – 2.
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