M39L0R7090U3ZE6F Datasheet | Micron Technology

Features NOR Flash with Mobile LPDDR 133-Ball MCP M39L0Rx0x0U3 Features Multichip Package - One die of 128Mb or 256Mb (MUX I/O, multiple bank, multilevel interface, burst) Flash memory - One die of 128Mb or 512Mb LPDDR - Supply voltages: - VDDF = VDDQF = 1.7- 1.95V - VPPF = 9V for fast program - VDDD = VDDQD = 1.7- 1.95V - Electronic signature: - Manufacturer code: 20h - Top device codes: M58LR128KC = 882Eh M58LR256KC = 881Ch - Bottom device codes: M58LR128KD = 882Fh M58LR256KD = 881Dh - 133-ball VFBGA package - Ro HS-pliant Flash Memory - Multiplexed address/data - Synchronous/asynchronous read - Synchronous burst read mode: 66 MHz - Random access: 70ns - Synchronous burst read suspend - Programming time - 2.5µs typical word program time using buffer enhanced factory program mand - Memory organization - Multiple bank memory array: 16Mb banks - Parameter blocks (top or bottom...