MT29F16G08CBACB
Features
NAND Flash Memory
MT29F16G08CBACA, MT29F32G08CFACA, MT29F16G08CBACB, MT29F32G08CFACB Features
- Open NAND Flash Interface (ONFI) 2.2-pliant1
- Multiple-level cell (MLC) technology
- Organization
- Page size x8: 4320 bytes (4096 + 224 bytes)
- Block size: 256 pages (1024K + 56K bytes)
- Plane size: 2 planes x 1024 blocks per plane
- Device size: 16Gb: 2048 blocks; 32Gb: 4096 blocks
- Synchronous I/O performance
- Up to synchronous timing mode 4
- Clock rate: 12ns (DDR)
- Read/write throughput per pin: 166 MT/s
- Asynchronous I/O performance
- Up to asynchronous timing mode 5
- Read/write throughput per pin: 50 MT/s
- t RC/t WC: 20ns (MIN)
- Array performance
- Read page: 75µs (MAX)
- Program page: 1300µs (TYP)
- Erase block: 3.8ms (TYP)
- Operating Voltage Range
- VCC: 2.7- 3.6V
- VCCQ: 2.7- 3.6V
- mand set: ONFI NAND Flash Protocol
- Advanced mand Set
- Program cache
- Read cache sequential
- Read cache random
- One-time programmable (OTP) mode
- Multi-plane mands
- Multi-LUN...
