MT29F16G08EAAC4
Key Features
- NAND Flash Memory
- Open NAND Flash Interface (ONFI) 1.0 pliant
- Single-level cell (SLC) technology
- READ performance – Random READ: 25µs – Sequential READ: 20ns
- WRITE performance – PROGRAM PAGE: 250µs (TYP) – BLOCK ERASE: 1.5ms (TYP)
- Data retention: 10 years
- First block (block address 00h) guaranteed to be valid when shipped from factory1
- Industry-standard basic NAND Flash mand set
- Operation status byte provides a software method of detecting: – Operation pletion – Pass/fail condition – Write-protect status
- Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM or ERASE cycle pletion
