MT29F8G08BAA Datasheet | Micron Technology

Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features - Single-level cell (SLC) technology - Organization - Page size x8: 2,112 bytes (2,048 + 64 bytes) - Block size: 64 pages (128K + 4K bytes) - Plane size: 2,048 blocks - Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks - READ performance - Random READ: 25µs (MAX) - Sequential READ: 25ns (MIN) - WRITE performance - PROGRAM PAGE: 220µs (TYP) - BLOCK ERASE: 1.5ms (TYP) - Data retention: 10 years - Endurance: 100,000 PROGRAM/ERASE cycles - First block (block address 00h) guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1 - Industry-standard basic NAND Flash mand set - Advanced mand set: - PROGRAM PAGE CACHE MODE - PAGE READ CACHE MODE - One-time programmable (OTP) mands - Two-plane mands - Interleaved die operations - READ UNIQUE ID (contact factory) - READ ID2 (contact factory) - Operation status byte provides a software method of detecting: - Operation...