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MT5C1604 - 4K x 4 SRAM

Key Features

  • High speed: 9, 10, 12, 15, 20 and 25ns.
  • High-performance, low-power, CMOS double-metal process.
  • Single +5V ±1O% power supplL.
  • Easy memory expansion with CE option.
  • All inputs and outputs are TIL-compatible.

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📁 Similar Datasheet

Part Number Description Manufacturer
MT5C1001 SRAM ASI
MT5C1001 1M x 1 SRAM Micross
MT5C1005 SRAM MEMORY ARRAY ASI
MT5C1005 256K x 4 SRAM Micross
MT5C1008 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS ASI

Other Datasheets by Micron Technology

Part Number Description
MT5C1601 16K x 1 SRAM
MT5C1605 4K x 4 SRAM
MT5C1608 2K x 8 SRAM
MT5C1001 1 Meg x 1 SRAM
MT5C1005 256K x 4 SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AJlIC:I=ICN 1-· 4KMxT45CSR16A0M4 SRAM 4Kx4 SRAM •U1 -------------------------------------------~ FEATURES • High speed: 9, 10, 12, 15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±1O% power supplL • Easy memory expansion with CE option • All inputs and outputs are TIL-compatible OPTIONS • Timing 9ns access IOns access 12ns access 15ns access 20ns access 25ns access MARKING -9 -10 -12 -15 -20 -25 • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) None DJ PIN ASSIGNMENT (Top View) 2o-Pin DIP (5A-1) PA4 1 '--' 20 Vee AS 2 A6 3 A7 4 AS 5 A9 6 19 PA3 18 PA2 17 PAl 16 pAD 15 pDQ4 Al0 7 All 8 14 P 003 13 pDQ2 CE 9 Vss 10 12 POOl P11 WE l- '~I'll.