MT60B4G4 Description
16Gb DDR5 SDRAM Die Rev.
MT60B4G4 Key Features
- VDD = VDDQ = 1.1V (NOM)
- VPP= 1.8V (NOM)
- On-die, internal, adjustable VREF generation for DQ
- 1.1V pseudo open-drain I/O
- TC maximum up to 95°C
- 32ms, 8192-cycle refresh up to 85°C
- 16ms, 8192-cycle refresh at >85°C to 95°C
- 32 internal banks (x4, x8): 8 groups of 4 banks each
- 16 internal banks (x16): 4 groups of 4 banks each
- 16n-bit prefetch architecture