N25Q032A11EF440x
N25Q032A11EF440x is Multiple I/O Serial Flash Memory manufactured by Micron Technology.
- Part of the N25Q032A11E124xx comparator family.
- Part of the N25Q032A11E124xx comparator family.
32Mb, 1.8V, Multiple I/O Serial Flash Memory Features
Micron Serial NOR Flash Memory
1.8V, Multiple I/O, 4KB Sector Erase N25Q032A11E124xx, N25Q032A11EF440x, N25Q032A11ESE40x, N25Q032A11ESF40x, N25Q032A11EF840x, N25Q032A11EF640x Features
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- - SPI-patible serial bus interface 108 MHz (MAX) clock frequency 1.7- 2.0V single supply voltage Dual/quad I/O instruction provides increased throughput up to 432 MHz Supported protocols
- Extended SPI, dual I/O, and quad I/O Execute-in-place (XIP) mode for all three protocols
- Configurable via volatile or nonvolatile registers
- Enables memory to work in XIP mode directly after power-on PROGRAM/ERASE SUSPEND operations Continuous read of entire memory via a single mand
- Fast read
- Quad or dual output fast read
- Quad or dual I/O fast read Flexible to fit application
- Configurable number of dummy cycles
- Output buffer configurable Software reset 64-byte, user-lockable, one-time programmable (OTP) dedicated area Erase capability
- Subsector erase 4KB uniform granularity blocks
- Sector erase 64KB uniform granularity blocks
- Full-chip erase
- Write protection
- Software write protection applicable to every 64KB sector via volatile lock bit
- Hardware write protection: protected area size defined by four nonvolatile bits (BP0, BP1, BP2, and TB)
- Additional smart protections, available upon request
- Electronic signature
- JEDEC-standard 2-byte signature (BB16h)
- Unique ID code (UID): 17 read-only bytes, including:
- Two additional extended device ID (EDID) bytes to identify device factory options
- Customized factory data (14 bytes)
- Minimum 100,000 ERASE cycles per sector
- More than 20 years data retention
- Packages JEDEC standard, all Ro HS pliant
- F4 = UF-PDFN-8 4mm x 3mm (MLP8 4mm x...