JAN4N22 Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX and JANTXV quality levels. RATINGS Input to Output...
JAN4N22 Key Features
- Overall current gain...1.5 typical (4N24) Base lead provided for conventional transistor biasing Rugged package High gai