JAN4N24A Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX, and JANTXV quality levels. RATINGS Input to Output...
JAN4N24A Key Features
- Collector is electrically isolated from the case. Overall current gain...1.5 typical (4N24A) Base lead provided for conv