JANS4N49 Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels. RATINGS Input to Output...
JANS4N49 Key Features
- High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transisto