JANS4N49A Description
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF19500 JAN, JANTX, JANTXV and JANS quality levels. RATINGS Input to Output...
JANS4N49A Key Features
- High Reliability Base lead provided for conventional transistor biasing Rugged package High gain, high voltage transisto