2N3467L Datasheet | Microsemi

TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices 2N3467 2N3467L 2N3468 2N3468L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3467 2N3467L 40 40 2N3468 2N3468L 50 50 Unit Vdc Vdc Vdc Adc W W 0 C .. @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range 1) Derate linearly 5.71 m W/0C for TA > +250C 2) Derate linearly 28.6 m W/0C for TC > +250C 5.0 1.0 1.0 5.0 -55 to +175 TO-39- (TO-205AD) 2N3467, 2N3468 TO-5- 2N3467L, 2N3468L - See appendix A for package outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 m Adc Emitter-Base Breakdown Current IE = 10 µAdc Collector-Emitter Breakdown Current IC = 10 m Adc Collector-Base Cutoff Current VCB = 30 Vdc Collector-Emitter Cutoff Current VEB = 3.0 Vdc, VCE = 30 2N3467, L 2N3468, L V(BR)CBO V(BR)EBO 2N3467, L 2N3468, L V(BR)CEO ICBO ICEX 40 50 5.0 40 50 100 100 Vdc Vdc Vdc ηAdc n Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3467, L, 2N3468, L, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC =150 m Adc, VCE = 1.0 Vdc 2N3467, L 2N3468, L 2N3467, L 2N3468, L 2N3467, L 2N3468, L VCE(sat) h FE 40 25 40 25 40 25 0.35 0.6 1.2 1.0 1.2 1.6 Vdc 120 75 IC = 500 m Adc, VCE = 1.0 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc Collector-Emitter Saturation Voltage IC = 150 m Adc, IB = 15 m Adc IC = 500 m Adc, IB = 50 m Adc IC = 1.0 Adc, IB = 100 m Adc Base-Emitter Saturation Voltage IC = 150 m Adc, IB = 15 m Adc IC = 500 m Adc, IB = 50 m Adc IC = 1.0 Adc, IB = 100 m Adc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Output Capacitance VCB = 10 Vdc, IE = 0, 100 k Hz ≤ f ≤ 1.0 MHz Extrapolated Unity...