• Part: 2N4238
  • Description: NPN MEDIUM POWER SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: Microsemi
  • Size: 76.21 KB
Download 2N4238 Datasheet PDF
Microsemi
2N4238
2N4238 is NPN MEDIUM POWER SILICON TRANSISTOR manufactured by Microsemi.
- Part of the 2N4237 comparator family.
TECHNICAL DATA NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/581 Devices 2N4237 2N4238 2N4239 Qualified Level JANTX JANTXV MAXIMUM RATINGS (TA = 250C Unless Otherwise noted) Ratings Symbol 2N4237 2N4238 2N4239 Units Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 40 50 60 80 6.0 1.0 0.5 1.0 6.0 -65 to +200 Max. 29 80 100 Vdc Vdc Vdc Adc Adc W W °C Unit C/W .. TO-39- THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 m W/0C for TA > +250C 2) Derate linearly 34 m W/0C for TC > +250C - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage 2N4237 IC = 100 m Adc 2N4238 2N4239 Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 90 Vdc, VBE = 1.5 Vdc 2N4237 VCE = 50 Vdc 2N4238 VCE = 80 Vdc 2N4239 VCE = 10 Vdc Collector-Base Cutoff Current 2N4237 VCE = 50 Vdc 2N4238 VCE = 80 Vdc 2N4239 VCE = 10 Vdc V(BR)CEO 50 80 100 0.5 Vdc IEBO m Adc ICEX 100 100 100 100 100 100 n Adc ICBO n Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N4237, 4238, 4239 JAN, JANTX, JANTXV ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward Current Transfer Ratio IC = 250 m Adc, VCE = 1.0 Vdc IC = 500 m Adc, VCE = 1.0 Vdc Collector-Emitter Saturation Voltage IC = 500 Adc, IB = 50 Adc IC = 1.0 Adc, IB = 0.1 Adc Base-Emitter Saturation Voltage IC = 500 Adc, IB = 50 Adc IC = 1.0 Adc, IB = 0.1 Adc h FE 30 30 150 VCE(sat) 0.3 0.6 1.0 1.5 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of mon Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio...