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Bipolar Transistor
Description:
A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TA = +25°C) Total Device Dissipation(TC = +25°C) Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case
Symbol VCBO VCEO
IC
IB
Ptot
TJ Tstg RthJC
Rating 80 60 6 1 500 1 6
+200 -65 to +200
29
Unit
V
A mA W
°C °C/W
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