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2N4238 Datasheet Bipolar Transistor

Manufacturer: Multicomp

Overview: Bipolar Transistor.

Datasheet Details

Part number 2N4238
Manufacturer Multicomp
File Size 231.25 KB
Description Bipolar Transistor
Datasheet 2N4238-Multicomp.pdf

General Description

: A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.

Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TA = +25°C) Total Device Dissipation(TC = +25°C) Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCBO VCEO IC IB Ptot TJ Tstg RthJC Rating 80 60 6 1 500 1 6 +200 -65 to +200 29 Unit V A mA W °C °C/W www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Min ICBO VCB = 60V, IE = 0 Collector Cutoff Current ICEV VCE = 80V, VBE = -1.5V VCE = 50V, VBE = -1.5V, TC = +150°C - Emitter Cutoff Voltage IEBO VEB = 6V, lC = 0 Collector - Emitter Sustaining Voltage VCEO(sus) lC = 100mA, IB = 0, (Note1) 60 Collector - Emitter Saturation Voltage VCE(sat) lC = 500mA, IB = 50mA, (Note1) lC = 1A, IB = 100mA, (Note1) - Base - Emitter On Voltage VBE(on) VCE = 1V, lC = 250mA DC Current Gain 30 hFE lC = 1A, VCE = 1V, (Note 1) 15 Collector - Base Capactiance Small - Signal Current Gain Ccbo VCB = 10V, lE = 0, f = 1MHz - hfe VCE = 10V, lC = 100mA, f = 1kHz 30 Note: 1.

Pulse Duration : %300µs, Duty Cycle %2% Max 100 1 500 0.3 0.6 1 150 100 - Unit µA µA mA µA V pF - Dimensions A B C D E F G H I J K Min.

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