2N5681 Datasheet | Microsemi

TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 2N5682 120 120 4.0 1.0 0.5 1.0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C .. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 m W/0C for TA > +250C 2) Derate linearly 57 m W/0C for TC > +250C Max. 17.5 TO-39- (TO-205AD) - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. 100 120 1.0 10 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 m Adc 2N5681 2N5682 Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc 2N5681 VCE = 80 Vdc 2N5682 Collector-Emitter Cutoff Current VBE = 1.5 Vdc VCE = 100 Vdc 2N5681 VCE = 120 Vdc 2N5682 Collector-Baser Cutoff Current VCE = 100 Vdc 2N5681 VCE = 120 Vdc 2N5682 V(BR)CEO Vdc µAdc µAdc IEBO ICEO ICEX 100 n Adc ICBO 100 n Adc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N5681, 2N5682 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward Current Transfer Ratio IC = 250 m Adc, VCE = 2.0 Vdc IC = 500 m Adc, VCE = 2.0 Vdc IC = 1.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 250 m Adc, IB = 25 m Adc IC = 500 m Adc, IB = 50 m Adc Base-Emitter Saturation Voltage IC = 250 m Adc, IB = 25 m Adc IC = 500 m Adc, IB = 50 m Adc h FE 40 20 5 150 VCE(sat) 0.6 1.0 1.1 1.3 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of...