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2N5681 - NPN POWER TRANSISTOR

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TECHNICAL DATA NPN POWER TRANSISTOR SILICON AMPLIFIER Qualified per MIL-PRF-19500/583 Devices 2N5681 2N5682 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS (TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 2N5682 120 120 4.0 1.0 0.5 1.0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C Max. 17.