APT106N60B2C6 - Super Junction MOSFET

Microsemi Corporation

Datasheet Details

Part number	APT106N60B2C6
Manufacturer	Microsemi Corporation
File Size	163.87 KB
Description	Super Junction MOSFET
Datasheet	APT106N60B2C6 Datasheet
Additional preview pages of the APT106N60B2C6 datasheet.

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APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance www.DataSheet4U.net • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 All Ratings per die: TC = 25°C unless otherwise speciﬁed. APT106N60B2C6 600 106 68 318 ±20 833 -55 - to 150 260 18.

Published: Jul 15, 2011 |