APT106N60B2C6 datasheet by Microsemi (now Microchip Technology).
| Part number | APT106N60B2C6 |
|---|---|
| Datasheet | APT106N60B2C6_MicrosemiCorporation.pdf |
| File Size | 163.87 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | Super Junction MOSFET |
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APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance ..net Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel) Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation.
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| APT100GF60JU2 | Boost chopper NPT IGBT |
| APT100GF60JU3 | ISOTOP Buck chopper NPT IGBT |
| APT100GT120JR | Thunderbolt IGBT |
| APT100GT120JRDL | Resonant Mode IGBT |
| APT100GT120JRDQ4 | Thunderbolt IGBT |
| APT100GT120JU2 | ISOTOP Boost chopper Trench Field Stop IGBT |
| APT100GT120JU3 | ISOTOP Buck chopper Trench IGBT |
| APT100GT60B2R | Thunderbolt IGBT |
| APT100GT60B2RG | Thunderbolt IGBT |
| APT100GT60JRDL | Resonant Mode Combi IGBT |
