APT106N60B2C6 Description
APT106N60B2C6 600V 106A 0.035Ω C O OLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) Low Miller Capacitance ..net Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated Dual die (parallel) Popular T-MAX Package Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation.