APT14M100B Datasheet | Microsemi

- Fast switching with low EMI/RFI - Low RDS(on) - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - PFC and other boost converter - Buck converter - Two switch forward (asymmetrical bridge) - Single switch forward - Flyback - Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 14 9 55 ±30 875 7 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 5.9 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 Microsemi Website-http://.microsemi. N- m -55 0.11 150 °C 300 oz g in- lbf 04-2009 050-8105 Rev B Min Typ Max 500 0.25 Unit W °C/W Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS TJ = 25°C unless otherwise...