APT14M120S Datasheet | Microsemi

FEATURES - Fast switching with low EMI/RFI - Low RDS(on) - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - PFC and other boost converter - Buck converter - Two switch forward (asymmetrical bridge) - Single switch forward - Flyback - Inverters .. Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 14 9 51 ±30 1070 7 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 625 0.20 Unit W °C/W °C oz g in- lbf N- m 10-2006 050-8094 Rev A Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://.microsemi. Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 7A APT14M120B_S Typ 1.41 0.97 4 -10 Max Unit V V/°C Ω V m V/°C µA n A Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On...