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APT18M100B - N-Channel MOSFET

Datasheet Summary

Features

  • Fast switching with low EMI/RFI.
  • Low RDS(on).
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

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Datasheet Details

Part number APT18M100B
Manufacturer Microsemi Corporation
File Size 428.46 KB
Description N-Channel MOSFET
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APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
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