APT18M100S - N-Channel MOSFET

Microsemi (now Microchip Technology)

Download the APT18M100S datasheet PDF. This datasheet also covers the APT18M100B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Fast switching with low EMI/RFI.
Low RDS(on).
Ultra low Crss for improved noise immunity.
Low gate charge.
Avalanche energy rated.
RoHS compliant.

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APT18M100S n-channel mosfet by Microsemi (now Microchip Technology) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (APT18M100B_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	APT18M100S
Manufacturer	Microsemi (now Microchip Technology)
File Size	428.46 KB
Description	N-Channel MOSFET
Datasheet	APT18M100S Datasheet

Full PDF Text Transcription for APT18M100S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT18M100S. For precise diagrams, and layout, please refer to the original PDF.

APT18M100B APT18M100S 1000V, 18A, 0.70Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe de...

View more extracted text

age N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

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