APT24M120B2 Datasheet | Microsemi

FEATURES - Fast switching with low EMI/RFI - Low RDS(on) - Ultra low Crss for improved noise immunity - Low gate charge - Avalanche energy rated - Ro HS pliant TYPICAL APPLICATIONS - PFC and other boost converter - Buck converter - Two switch forward (asymmetrical bridge) - Single switch forward - Flyback - Inverters Absolute Maximum Ratings Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Ratings 24 15 90 ±30 1875 12 Unit V m J A Thermal and Mechanical Characteristics Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight 0.22 6.2 10 1.1 -55 0.11 150 300 Min Typ Max 1040 0.12 Unit W °C/W °C 8-2006 050-8072 Rev A oz g in- lbf N- m Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://.microsemi. Static Characteristics Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS TJ = 25°C unless otherwise specified Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 12A APT24M120B2_L Typ 1.41 0.55 4 -10 Max Unit V V/°C Ω V m V/°C µA n A Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On...