Overview: APT30GS60BRDL(G)
.. 600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode bi IGBT®
The Thunderbolt HS™ IGBT used in this resonant mode bi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution bined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. bi versions are packaged with a high speed, soft recovery DL series diode.
