APT30GS60BRDL Description
600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode bi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode bi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An...
APT30GS60BRDL Key Features
- Fast Switching with low EMI
- Very Low EOFF for Maximum Efficiency
- Short circuit rated
- Low Gate Charge
- RoHS pliant
- Tight parameter distribution
- Easy paralleling
- Low Forward Diode Voltage (VF)
- Ultrasoft Recovery Diode
APT30GS60BRDL Applications
- Fast Switching with low EMI
- Very Low EOFF for Maximum Efficiency