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APT30GS60BRDLG Datasheet Resonant Mode Combi IGBT

Manufacturer: Microsemi (now Microchip Technology)

Overview: APT30GS60BRDL(G) .. 600V, 30A, V CE(ON) = 2.8V Typical Resonant Mode bi IGBT® The Thunderbolt HS™ IGBT used in this resonant mode bi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution bined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. bi versions are packaged with a high speed, soft recovery DL series diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Fast Switching with low EMI.
  • Very Low EOFF for Maximum Efficiency.
  • Short circuit rated.
  • Low Gate Charge.
  • RoHS Compliant.
  • Tight parameter distribution.
  • Easy paralleling.
  • Low Forward Diode Voltage (VF).
  • Ultrasoft Recovery Diode Typical.

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
APT30GS60BRDL Resonant Mode Combi IGBT
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APT30GN60B Resonant Mode Combi IGBT
APT30GN60BDQ2 Resonant Mode Combi IGBT
APT30GN60BDQ2G Resonant Mode Combi IGBT
APT30GN60BG Resonant Mode Combi IGBT
APT30GN60K Resonant Mode Combi IGBT
APT30GN60KG Resonant Mode Combi IGBT
APT30GN60S Resonant Mode Combi IGBT

APT30GS60BRDLG Distributor