APT8M100B - N-Channel MOSFET

Microsemi (now Microchip Technology)

Key Features

Fast switching with low EMI/RFI.
Low RDS(on).
Ultra low Crss for improved noise immunity.
Low gate charge.
Avalanche energy rated.
RoHS compliant.

APT8M100B n-channel mosfet by Microsemi (now Microchip Technology) - Datasheet Preview

Datasheet Details

Part number	APT8M100B
Manufacturer	Microsemi (now Microchip Technology)
File Size	290.19 KB
Description	N-Channel MOSFET
Datasheet	APT8M100B Datasheet

Full PDF Text Transcription for APT8M100B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT8M100B. For precise diagrams, and layout, please refer to the original PDF.

APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe desig...

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N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

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