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APT8M100S - N-Channel MOSFET

Download the APT8M100S datasheet PDF. This datasheet also covers the APT8M100B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Fast switching with low EMI/RFI.
  • Low RDS(on).
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT8M100B_MicrosemiCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for APT8M100S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT8M100S. For precise diagrams, and layout, please refer to the original PDF.

APT8M100B APT8M100S 1000V, 8A, 1.80Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe desig...

View more extracted text
N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

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