Datasheet4U Logo Datasheet4U.com

APT94N65B2C3 - Super Junction MOSFET

📥 Download Datasheet

Datasheet preview – APT94N65B2C3

Datasheet Details

Part number APT94N65B2C3
Manufacturer Microsemi Corporation
File Size 169.44 KB
Description Super Junction MOSFET
Datasheet download datasheet APT94N65B2C3 Datasheet
Additional preview pages of the APT94N65B2C3 datasheet.

📁 Similar Datasheet

  • APT94N60L2C3 - Super Junction MOSFET (Advanced Power Technology)
  • APT9021DFN - (APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902R4AN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902R4BN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902R4CN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902RAN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902RBN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT902RCN - (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET (Advanced Power Technology)
  • APT90DR160HJ - Standard Rectifier Diode FULL BRIDGE (Microsemi)
  • APT97N65B2C6 - Super Junction MOSFET (Microsemi)
Other Datasheets by Microsemi Corporation

Full PDF Text Transcription

Click to expand full text
650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET T-MaxTM • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings per die: TC = 25°C unless otherwise specified.
Published: |