Datasheet4U Logo Datasheet4U.com

GC15011 - FREQUENCY LINEAR TUNING VARACTORS

Description

A Frequency Linear Tuning Varactor (FLTVAR)TM is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications.

These diodes feature thermal oxide passivation for high reliability, low leakage current, and very low surface noise.

📥 Download Datasheet

Datasheet preview – GC15011

📁 Similar Datasheet

  • GC15MPS12-247 - Silicon Carbide Schottky Diode (GeneSiC)
  • GC10MPS12-220 - Silicon Carbide Schottky Diode (GeneSiC)
  • GC10MPS12-252 - Silicon Carbide Schottky Diode (GeneSiC)
  • GC11N70 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GC11N70F - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GC1205DL - 10W DC-DC Converter (GCi Technologies)
  • GC1205L - 10W DC-DC Converter (GCi Technologies)
  • GC1212DL - 10W DC-DC Converter (GCi Technologies)
  • GC1212L - 10W DC-DC Converter (GCi Technologies)
  • GC1215DL - 10W DC-DC Converter (GCi Technologies)
Other Datasheets by Microsemi Corporation
  • GC1501 - 30 VOLT ABRUPT JUNCTION VARACTOR DIODES
  • GC15010 - FREQUENCY LINEAR TUNING VARACTORS
  • GC15012 - FREQUENCY LINEAR TUNING VARACTORS
  • GC15013 - FREQUENCY LINEAR TUNING VARACTORS
  • GC15014 - FREQUENCY LINEAR TUNING VARACTORS
  • GC15015 - FREQUENCY LINEAR TUNING VARACTORS
  • GC15016 - FREQUENCY LINEAR TUNING VARACTORS
  • GC1500 - 30 VOLT ABRUPT JUNCTION VARACTOR DIODES

Full PDF Text Transcription

Click to expand full text
TOC Tuning Varactors FREQUENCY LINEAR TUNING VARACTORS DESCRIPTION A Frequency Linear Tuning Varactor (FLTVAR)TM is a silicon epitaxial mesa device, designed to provide wideband Linear Tuning in VCO and filter applications. These diodes feature thermal oxide passivation for high reliability, low leakage current, and very low surface noise. They offer Q values well above ion-implanted hyperabrupt diodes. The specifications below apply to chips, or to chips mounted on carriers. Although these chips can be provided in any of our standard packages, this is not recommended for the lower capacitance diodes, because the parallel parasitic capacitance of the package degrades linearity at high bias voltages. suitable circuits, with no need for external linearization.
Published: |