JAN2N930 - NPN Transistor

Microsemi Corporation

Datasheet Details

Part number	JAN2N930
Manufacturer	Microsemi Corporation
File Size	75.51 KB
Description	NPN Transistor
Datasheet	JAN2N930 Datasheet
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TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices www.DataSheet4U.com Qualified Level JAN JANTX JANTXV 2N930 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC Value 45 60 6.0 30 300 600 -55 to +200 Max. 97 Units Vdc Vdc Vdc mAdc mW 0 @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.

Published: Nov 7, 2008 |