JANTX2N3879 Datasheet | Microsemi

TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/526 Devices .. Qualified Level JANTX JANTXV 2N3879 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C (1) Operating & Storage Junction Temperature Range Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC Value 75 120 7.0 5.0 7.0 35 -65 to +200 Max. 5.0 Unit Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 200 m W/0C for TC > 250C TO-66- (TO-213AA) - See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICEO ICEX ICBO IEBO Min. 75 5.0 4.0 25 10 Max. Unit Vdc Vdc m Adc m Adc m Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 m Adc Collector-Emitter Cutoff Current VCE = 50 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 120 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3879 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 0.5 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 5.0 Vdc IC = 4.0 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 4.0 Adc, IB = 0.4 Adc Base-Emitter Saturation Voltage IC = 4.0 Adc, IB = 0.4 Adc Base-Emitter Voltage .. IC = 4.0 Adc, VCE = 2.0 Vdc h FE 40 20 12 80 100 1.2 2.0 1.8 Vdc Vdc Vdc VCE(sat) VBE(sat) VBE(on) DYNAMIC CHARACTERISTICS Magnitude of mon Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 500 m Adc, VCE = 10 Vdc, f = 10 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1.0 MHz hfe Cobo 4.0 20 175 p F SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 4.0 Adc; IB = 0.4...