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MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

General Description

Silicon NPN transistor, designed for VHF and UHF equipment.

Applications include low noise broadband amplifier; predriver, driver, and output stages.

Key Features

  • Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwidth Product (min) @ 60mA Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz 1. Emitter 2. Base 3. Collector TO-39.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Gpe = 10 dB (typ) @ 60 mA, 300 MHz 3 GHz Current-Gain Bandwidth Product (min) @ 60mA Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include low noise broadband amplifier; predriver, driver, and output stages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 35 3.