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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Rbe = 330fi) Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"c = 50°C Derate above 50°C
Junction Temperature Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol VCER vCBO v EBO
"C
PD
Tj T stg
Value 25 35 3.5 150 2.5 20.0
+ 175 - 65 to + 200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C °C
Symbol R &JC
Max
50
Unit °C/W
MRF517
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
f
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage flC = 5.0 mAdc, q = 0)
Collector-Emitter Breakdown Voltage OC = 5.
MRF517 Datasheet
