1N649-1
1N649-1 is Silicon Switching Diode manufactured by Microsemi.
FEATURES
- 1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240
- SILICON RECTIFIER
- METALLURGICALLY BONDED
- HERMETICALLY SEALED
- DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine 8.3m S: Total Power Dissipation: Operating Current:
Operating Current: Derating Factor: Derating Factor:
D.C. Reverse Voltage (VRWM):
-65°C to +175°C -65°C to +175°C 5.0A 500m W 400m A, TA= +25°C
150m A, TA= +150°C 2m A/°C above +25°C 6m A/°C above +150°C
600V
DESIGN DATA
Case: Hermetically sealed glass package per MILPRF-19500/240 DO-35 outline
Lead Material: Copper clad steel Lead Finish: Tin/Lead Thermal Resistance (RθJL): 250°C/W maximum at L=.375” Thermal Impedance (ZθJX): 35°C/W maximum Marking: Blue body coat, Black digits. Polarity: Cathode end is banded.
DC ELECTRICAL CHARACTERISTICS
VF IR
Ambient (°C)
IF m A
Min Max Ambient
V V (°C) V (dc)
25 400 0.80 1.00 25
150...
