Microsemi 2N1131
LOW POWER PNP SILICON TRANSISTOR
| Part No. | 2N1131 |
|---|---|
| Datasheet | 2N1131 Download |
| Manufacturer |  Microsemi |
| Description | LOW POWER PNP SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5* 2N1311L, 2N1312L *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mAdc Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µAdc Emitter-Base Cutoff Current IEBO VEB = 5.0 Vdc Collector-Emitter Cutoff Current ICER VCE = 50 Vdc, RBE ≤ 10 ohms Collector-Base Cutoff Current VCB = 50 Vdc ICBO VCB = 30 Vdc Min. Max. Unit Vdc Vdc µAdc mAdc µAdc 40 50 100 10 10 1.0 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax...
