Datasheet Details
| Part number | 2N1131 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 339.42 KB |
| Description | SILICON PNP TRANSISTOR |
| Datasheet | 2N1131-CentralSemiconductor.pdf |
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Overview: 2N1131 SILICON PNP TRANSISTOR w w w. c e n t r a l s e m i .
| Part number | 2N1131 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 339.42 KB |
| Description | SILICON PNP TRANSISTOR |
| Datasheet | 2N1131-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N1131 is a silicon PNP transistor mounted in a hermetically sealed package designed for medium current switching applications.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage (RBE=10Ω) VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 50 50 35 5.0 0.6 2.0 0.6 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V ICBO VCB=30V, TA=150°C ICBO VCB=50V IEBO VEB=2.0V BVCBO IC=100μA 50 BVCER IC=100mA, RBE=10Ω 50 BVCEO IC=100mA 35 BVEBO IE=100μA 5.0 VCE(SAT) IC=150mA, IB=15mA VBE(SAT) IC=150mA, IB=15mA hFE VCE=10V, IC=5.0mA 15 hFE V
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N1131 | PNP SILICON ANNULAR TRANSISTORS | Motorola |
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2N1131 | LOW POWER PNP SILICON TRANSISTOR | Microsemi |
|
2N1131A | PNP SILICON ANNULAR TRANSISTORS | Motorola |
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2N1131L | LOW POWER PNP SILICON TRANSISTOR | Microsemi |
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