• Part: 2N1131L
  • Description: LOW POWER PNP SILICON TRANSISTOR
  • Manufacturer: Microsemi
  • Size: 56.61 KB
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Datasheet Summary

TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices 2N1131 2N1131L 2N1132 2N1132L Qualified Level JAN JANTX TO-39- MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT Top, Tj All Units 40 50 5.0 600 0.6 2.0 -65 to +200 Units Vdc Vdc Vdc mAdc W W °C @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range 1) Derate linearly 3.4 mW/0C for TA ≥ +250C 2) Derate linearly 11.4 mW/0C for TC ≥ +250C 2N1131, 2N1132 TO-5- 2N1311L, 2N1312L - See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise...